| PART |
Description |
Maker |
| TC53257 TC53257F TC53257P |
256K BIT (32K WORD x 8 BIT) CMOS MASK ROM SILICON GATE MOS
|
Toshiba Semiconductor
|
| MX23C8000 MX23C8000MC-10 MX23C8000MC-12 MX23C8000M |
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 150 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PDIP32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 200 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 100 ns, PQCC32
8M-BIT [1M x 8] CMOS MASK ROM 1M X 8 MASK PROM, 120 ns, PQCC32
|
Macronix International Co., Ltd.
|
| LH53259 LH53259D LH53259N LH53259T |
CMOS 256K(32K X 8) Mask-Programmable ROM
CMOS 256K (32K x 8) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| LH532600 LH532600N LH532600D LH532600T LH532600TR |
CMOS 2M(256K X 8/128K X 16) Mask-Programmable ROM
CMOS 2M (256K x 8/128K x 16) MROM
|
SHARP[Sharp Electrionic Components]
Sharp Corporation
|
| IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位）
3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| A23L1616 A23L16161 A23L16161V A23L16162 A23L16162V |
70ns 2M x 16/4M x 8bit CMOS MASK ROM
100ns 2M x 16/4M x 8bit CMOS MASK ROM
Power Resistor; Series:MK; Resistance:20ohm; Resistance Tolerance: /- 1 %; Power Rating:0.75W; Voltage Rating:400V; Temperature Coefficient: /-50 ppm; Mounting Type:Through Hole; Operating Temp. Min:0 C; Terminal Type:Radial Leaded
2M X 16 / 4M X 8 BIT CMOS MASK ROM 200万16 / 4米8位CMOS掩膜ROM
|
AMICC[AMIC Technology]
AMIC Technology Corporation
AMIC Technology, Corp.
|
| A23W9308 A23W9308L A23W9308M |
524.288 X 8 BIT CMOS MASK ROM 524.288 × 8位CMOS掩膜ROM
524,288 X 8 BIT CMOS MASK ROM
120ns/5.0V; 150ns/3.0V 254,288 x 8bit CMOS MASK ROM
|
Stancor
AMIC Technology
|
| NM27C020 NM27C020QE150 |
2 Meg (256k x 8) UV Erasable CMOS EPROM [Life-time buy]
2097152-Bit (256K x 8) UV Erasable CMOS EPROM
2,097,152-Bit (256K x 8) UV Erasable CMOS EPROM
2 /097 /152-Bit (256K x 8) UV Erasable CMOS EPROM
|
FAIRCHILD[Fairchild Semiconductor]
|
| HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns
256K (32K x 8-bit) UV EPROM, 250ns
32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM
256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
|
| 29F022B-90 29F022T-12 29F022T-55 29F022T-90 29F022 |
2M-BIT[256K x 8]CMOS FLASH MEMORY 200万位[256K × 8]的CMOS闪存
|
Macronix International Co., Ltd.
|
| LP62S2048AM-55LLT LP62S2048AM-70LLT LP62S2048A-T L |
256K X 8 BIT LOW VOLTAGE CMOS SRAM 256K × 8位低电压CMOS的SRAM
CAC 3C 3#12 PIN PLUG
|
AMIC Technology, Corp.
AMIC Technology Corporation
AMICC[AMIC Technology]
|
